2023 IWDTF Best Paper Award and Young Researcher Award winners.
Awards were presented to the authors of the following presentations.
2023 IWDTF Best Paper Award
S4-3
Keisuke Yamamoto (Kyushu Univ., Japan)
“Fabrication and Electrical Characterization of Ge-on-Insulator based on Ge-on-Nothing Technology”
2023 IWDTF Young Researcher Award
S3-3
Takashi Onaya (Univ. of Tokyo/NIMS, Japan)
“Origin of Fatigue Properties Induced by Oxygen Vacancies Originating from Ferroelectric-HfxZr1−xO2/TiN Interface Reaction During Field Cycling”
S6-2
Yuchen Deng (JAIST, Japan)
“Threshold Voltage Modulation of AlGaN/GaN Devices via Vacuum Level Step Control Using Thin Oxide Interlayers”
S6-6
Qiao Chu (Univ. of Tokyo, Japan)
“Possible Origins of Mechanical Stress-Induced Anomalous Impact on Threshold Voltage of 4H-SiC (0001) MOSFET”
P-3
Eui Young Jung (Kyushu Univ., Japan)
“Transferable High-k/Boron Nitride Gate Dielectric for Two-Dimensional Field-Effect Transistors”
P-12
Tatsuya Suzuki (Tokyo City Univ., Japan)
“Degradation on nMOSFET and Interface Trap Creation under Channel Hot Carrier Stressing at Cryogenic Temperature”
P-22
Nannan You (Chinese Academy of Sciences, China)
“Utilizing High-Pressure Microwave Plasma Oxidation for Advanced SiC MOS”