The 2019 International Workshop on “Dielectric Thin Films for Future Electron Devices: Science and Technology” (2019 IWDTF) will be held at Tokyo Institute of Technology, Tokyo, Japan, on November 18-20, 2019. Because the series of IWDTF started in 1999, 2019 IWDTF is the 20 years anniversary. In addition to the papers on materials and processes of dielectric thin films for conventional logic devices, the papers for various electron devices including memory, power, analog, sensor, and display devices are welcome. This workshop focuses dielectric films including high-k, ferroelectric, antiferroelectric, tunneling-barrier, variable-resistance films, and so on as well as conventional ultrathin SiO2 and SiON films. The workshop will consist of invited and contributed talks, and poster presentations. Selected topics of current interests will be reviewed by several invited talks.

Papers are solicited in, but not limited to, the following areas:

  • Electron device application of dielectric thin films
  • Material design of dielectric thin films
  • Growth and related process of dielectric thin films
  • Characterization and control of dielectrics, dielectrics surfaces, and dielectrics interfaces
  • Electrical characterization of dielectrics, dielectrics surfaces, and dielectrics interfaces
  • Surface preparation and cleaning issues for dielectrics
  • Dielectric wearout and reliability
  • Dielectric reliability related to process integration
  • Surface passivation technology
  • Theoretical approaches to dielectrics, dielectrics surfaces, and dielectrics interfaces