KEYNOTE SPEAKERS:
| Ken Takeuchi (Univ of Tokyo): | “Co-design of non-volatile memory devices, circuits and systems in AI era” |
| Ming Liu (IMECAS): | “Oxide based resistive switching device for memory and computing applications” |
INVITED SPEAKERS:
| Byung Jin Cho (KAIST) : | “Anti-Ferroelectric HZO blocking layer in Charge trap Flash Memory Device” |
| Steven George (Univ of Colorado) | “Thermal Atomic Layer Etching of Dielectric Films and Pathways for Selectivity” |
| Masahiro Hori (Shizuoka Univ): |
“Charge pumping under electron spin resonance in Si MOSFETs -Identification of interface defects and detection of donor electrons-“ |
| Masaru Izawa (Hitachi High-Tech) : |
“Highly selective thermal-cyclic ALE for conformal etch and recess of thin films” |
| Jiyoung Kim (Univ of Texas at Dallas) : |
“Effects of Oxidation Reactants of thermal ALD for Ferroelectric Hf0.5Zr0.5O Films” |
| Terence Mittmann (NaMLab gGmbH) : |
“Ferroelectric phase stabilization influences HfO2-based device performance” |
| Norio Tokuda (Kanazawa Univ) : |
“Advances in diamond MOS interface” |
| Takao Marukame (Toshiba): |
“Metal-oxide synapse devices and their application to neuromorphic analog circuits” |
| Kasidit Toprasertpong (Univ of Tokyo) : |
“HfZrO2-based ferroelectric FETs for emerging computing technologies” |
| Lin-Wang Wang (Berkeley National Lab) : |
“Atomistic plane wave pseudopotential simulations for MOSFET devices” |
| Xinran Wang (Nanjing Univ) : |
“Ultrathin dielectric integration and reliability on 2D semiconductors” |