KEYNOTE SPEAKERS:
Hideo Hosono (Tokyo Institute of Technology & National Institute for Materials Science): | “Oxide Semiconductor : fundamentals and progress” |
Cheol Seong Hwang (Seoul National University): | “Functional memristive hardwares for unconventional computing” |
INVITED SPEAKERS:
Konrad Seidel (Fraunhofer IPMS, Germany): | “Integration of Ferroelectric Devices for Advanced in-Memory Computing Concepts ” |
Takeaki Yajima (Kyushu University): | “Designing neuromorphic devices using protons” |
Hiroki Ago (Global Innovation Center (GIC), Kyushu University): | “Wafer-scale synthesis and applications of multilayer hexagonal boron nitride ” |
Tomoki Machida (Institute of Industrial Science, University of Tokyo): | “Carrier transport in van der Waals junctions of h-BN and two-dimensional materials” |
Hisanori Aikawa (Kioxia Korea Corporation, Seoul, Korea): | “First demonstration of full integration and characterization of 4F2 1S1M cells with 45 nm of pitch and 20 nm of MTJ size” |
Tsunenobu Kimoto (Kyoto University): | “Physics and Performance Improvement of SiC MOSFETs” |
Hiroshi Funakubo (Tokyo Institute of Technology): | “Stabilization and identification of ferroelectric HfO2 thin films” |
Toshiki ITO (Canon Inc.): | “UV Nanoimprint Lithography on Combined Drops of Inkjet Resist” |
Jin-Seong Park (Hanyang University): | “Atomic Layer Deposited Oxide Semiconductor as a New Channel Material for BEOL FET Application: Potential & Prospect” |
Sanghun Jeon (Korea Advanced Institute of Science and Technology): | “The oppotunity of hafnia ferroelectrics for NAND flash memory applications” |