INVITED SPEAKERS

KEYNOTE SPEAKERS:
Ernest Wu (IBM): “Facts and Myths of Dielectric Breakdown Processes”
Shinichi Takagi (Univ. Tokyo): “Importance of semiconductor MOS interface control on advanced electron devices”

INVITED SPEAKERS:
Yi Zhao (Zhejiang Univ.):  “Ge-based Non-Volatile Memories”
Tuo-Hung Hou (National Chiao Tung Univ.) :“Emerging memory for data-centric computing”
Tadashi Yamaguchi (Renesas Electronics):“Highly Reliable Ferroelectric Hf0.5Zr0.5O2 Film with Al Nanoclusters Embedded by Sub-Monolayer Doping Technique”
Kohsuke Nagashio (Univ. Tokyo): “Understanding interface properties in 2D heterostructure FETs”
Hiroshi Yano (Univ. Tsukuba):“SiC MOS interface: what limits the channel mobility? ”
Daigo Kikuta (Toyota Central Labs.):“Improvement of gate oxide reliability and instability in GaN-based MOS devices”

TOPICAL SESSION:
“Achievement in Understanding Oxidation Processes of Si, Ge, SiGe, SiC, and GaN – 20 Years Anniversary –”
Yuji Takakuwa (Tohoku Univ.)
Takayoshi Shimura (Osaka Univ.)
Tomonori Nishimura (Univ. Tokyo)
Takuji Hosoi (Osaka Univ.) 
Yoshihiro Irokawa (NIMS)